KTC3265 डाटा शीट PDF( Datasheet )

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High DC current gain: hFE:100-320.  Low saturation voltage. Pb Lead-free  Suitable for driver stage of small motor.  C

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain : hFE=100 320. Low Saturation Voltage : VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA)

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z z z High DC current gain: hFE:100-320 Low saturation voltage. Suitable for driver stage of small motor. Complementary to KTC1298. Smal

KTC3265 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Tot

Elektronische Bauelemente KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor FEATURE High DC current gain Complementary to KTA1298 CLASSIFICATION OF hFE Product-Rank KTC3265-O Range 100~200 Marking C

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES z High DC current gain z Complementary to KTA1298 1. BASE 2. EMITTER 3. COL

SMD Type NPN Transistors KTC3265 Transistors ■ Features ● High DC Current Gain ● Low Saturation Voltage ● Small Package ● Complementary to KTA1298 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1