डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTB778 | Silicon PNP Power Transistors isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type KTD998 ·Minimum Lot-to-Lot variations for robust device
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Inchange Semiconductor |
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KTB778 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTD998. Recommended for 45 50W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collecto |
KEC |
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