KTA1298 डाटा शीट PDF( Datasheet )

SMD Type ■ Features ● Collector Power Dissipation: PC=200mW ● Collector Current: IC=-800mA Transistors PNP Transistors KTA1298 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain : hFE=100 320. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20

BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=100-320. z Low saturation voltage:VCE(sat)=-0.4V(Max) (IC=-500mA,IB=B -20mA). z Suitable

PNP Silicon Transistors MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC THERMAL CHARACTERISTICS C

KTA1298 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.  特征 / Features 直流电流增益高,饱和压�

TRANSISTOR (PNP) FEATURES z Low frequency power amplifier application z Power switching application SOT-23 1. BASE 2. EMITTER 3. COLLECTOR KTA1298 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Pa

Production specification Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=100-320. z Low saturation voltage:VCE(sat)=-0.4V(Max) (IC=-500mA,IB=-20mA). z Suitable for driver stage of smal