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SemiHow |
NPN Silicon Power Transistor • VCBO = 700V • VCEO = 400V • VBEO = 9V • IC = 8A TO-220 TO-220F 3 2 1 3 2 1 Ordering Information Ordering number KSH13007A KSH13007AF Package TO-220 TO-220F Pin Assignment 123 BCE BCE Packing Tube Tube hFE Classification Classification hFE |
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SemiHow |
Switch Mode Series NPN Silicon Power Transistor 0 Typ. Max Unit V Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage 1 8 5 60 30 1 2 3 1.2 1.6 110 4 1.6 3.0 0.7 mA V V V V V pF MHz μS μS μS *Base-Emitter Saturation Voltage Out |
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SemiHow |
NPN Silicon Power Transistor • VCBO = 700V • VCEO = 400V • VBEO = 9V • IC = 8A TO-220 TO-220F 3 2 1 3 2 1 Ordering Information Ordering number KSH13007A KSH13007AF Package TO-220 TO-220F Pin Assignment 123 BCE BCE Packing Tube Tube hFE Classification Classification hFE |
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Shantou Huashan |
NPN Silicon Transistor ) Cob fT tON tSTG tF IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A DC Current Gain Collector- Emitter Saturation Voltage 10 5 40 30 1 2 3 V V V V V pF 1.6 3 0.7 uS uS uS IC=2A, IB =400mA IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A |
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SemiHow |
Switch Mode series NPN silicon Power Transistor f=0.1MHz Min 400 Typ. Max Unit V Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage 1 8 5 60 30 1 2 3 1.2 1.6 80 4 16 1.6 3.0 0.7 mA V V V V V ㎊ ㎒ ㎲ ㎲ ㎲ *Base-Emitter Saturatio |
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SemiHow |
Switch Mode series NPN silicon Power Transistor V,IC=0 VCE=5V,IC=2A VCE=5V,I 5V,IC=5A 5A IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A IC=2A,IB=0.4A IC=5A,IB=1A VCB=10V, f=0.1MHz Min 400 Typ. Max Unit V 1 8 5 60 30 1 2 3 1.2 1.6 80 4 1.6 3.0 0.7 ㎃ V V V V V ㎊ ㎒ ㎲ ㎲ ㎲ *Base-Emitter Saturation Volta |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR 10 5 40 30 1 2 3 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A VCE(sat) Collector- Emitter Saturation Voltage V V V V V pF MHz IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCB=10V, f=0.1MHz VCE=10V, I |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR , IB=400mA IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz z VCE=10V, IC=500mA Base- Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On time Storage Time Fall Time 4 110 1.2 1.6 1.6 3 0.7 |
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SemiHow |
Switch Mode series NPN silicon Power Transistor =0 VCE=5V,IC=2A VCE=5V,I 5V,IC=5A 5A IC=2A,IB=0.4A IC=5A,IB=1A IC=8A,IB=2A IC=2A,IB=0.4A IC=5A,IB=1A VCB=10V, f=0.1MHz Min 400 Typ. Max Unit V 1 8 5 60 30 1 2 3 1.2 1.6 110 4 1.6 3.0 0.7 ㎃ V V V V V ㎊ ㎒ ㎲ ㎲ ㎲ *Base-Emitter Saturation Voltage |
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