| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • E |
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