डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K3380 | Silicon N Channel MOS FET 2SK3380
Silicon N Channel MOS FET High Speed Switching
Features
• Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
• 4 V gate drive device.
Outlin |
Hitachi |
|
K3385 | 2SK3385 | NEC |
|
K3386 | 2SK3386 | NEC |
|
K3380 | Silicon N Channel MOS FET | Hitachi |
www.DataSheet.in | 2017 | संपर्क |