K2611 डाटा शीट PDF( Datasheet )

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1

Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) K2611 Silicon N-

K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improve