IXTY1R6N50P डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IXTY1R6N50P | Power MOSFET PolarTM Power MOSFET
IXTY1R6N50P IXTP1R6N50P
VDSS = 500V
ID25 = 1.6A RDS(on) 6.5
N-Channel Enhancement Mode
Avalanche Rated
TO-252
Fast Intrinsic Rectifier
Symbol
E VDSS
VDGR
T VGSS
VGSM
ID25 IDM
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 IXYS |
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| IXTY1R6N50P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.5Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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 INCHANGE |
शेयर लिंक :
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