IXTV250N075T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET IXTV250N075T IXTV250N075TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IL

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot varia

Preliminary Technical Information TrenchMVTM Power MOSFET IXTV250N075T IXTV250N075TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IL