डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTV18N60P | Power MOSFET PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 18N60P IXTV 18N60P IXTV 18N60PS
V = 600 V DSS
ID25 = 18 A ≤ RDS(on) 420 mΩ
Symbol
V DSS
VDGR V
GS
VGSM ID25 IDM IAR E
AR
EAS
dv/dt
PD |
IXYS |
|
IXTV18N60P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 420mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
|
IXTV18N60PS | Power MOSFET PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 18N60P IXTV 18N60P IXTV 18N60PS
V = 600 V DSS
ID25 = 18 A ≤ RDS(on) 420 mΩ
Symbol
V DSS
VDGR V
GS
VGSM ID25 IDM IAR E
AR
EAS
dv/dt
PD |
IXYS |
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