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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ200N075T | Power MOSFET Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IID |
IXYS Corporation |
|
IXTQ200N075T | N-ChannelMOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 75V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
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