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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ182N055T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH182N055T IXTQ182N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 182 5.0
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDG |
IXYS Corporation |
|
IXTQ182N055T | N-ChannelMOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.3mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
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