IXTQ160N075T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N075T IXTQ160N075T VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLR

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot varia