डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTQ102N15T | Power MOSFET Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
VDSS = ID25 =
RDS(on) ≤
150V 102A 18mΩ
TO |
IXYS |
|
IXTQ102N15T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
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