डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP8N65X2 | Power MOSFET Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTY8N65X2 IXTA8N65X2 IXTP8N65X2
VDSS = ID25 = RDS(on)
650V 8A 500m
TO-252 (IXTY)
Symbol
VDSS VDGR
VGSS VGSM
ID25 I |
IXYS |
|
IXTP8N65X2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤500mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
|
IXTP8N65X2M | Power MOSFET Advance Technical Information
X2-Class Power MOSFET
(Electrically Isolated Tab)
IXTP8N65X2M
VDSS = ID25 = RDS(on)
650V 4A 550m
N-Channel Enhancement Mode
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
d |
IXYS |
|
IXTP8N65X2M | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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