डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP16N50P | PolarHV Power MOSFET PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA16N50P IXTP16N50P IXTQ16N50P
VDSS =
ID25 = ≤ RDS(on)
500V 16A 400mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
P |
IXYS |
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IXTP16N50P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP16N50P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot- |
INCHANGE |
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IXTP16N50PM | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP16N50PM
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 420mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot |
INCHANGE |
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IXTP16N50PM | Power MOSFET Advance Technical Information
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
IXTP16N50PM
VDSS = ID25 =
RDS(on) ≤
500V 7.5A 420mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
OVER |
IXYS |
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