IXTP14N60P डाटा शीट PDF( Datasheet )

PolarTM Power MOSFET Enhancement Mode Avalanche Rated IXTA14N60P IXTP14N60P IXTQ14N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ =

isc N-Channel MOSFET Transistor IXTP14N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 550mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va

PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP14N60PM VDSS = ID25 = RDS(on) ≤ 600V 7A 550mΩ OVERMOLDED (IXTP...M) OUTLINE Symbol