डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTM5N100 | Standard Power MOSFET Standard Power MOSFET
VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V
ID25 5A 5A
RDS(on) 2.4 Ω 2.0 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Tes |
IXYS Corporation |
|
IXTM5N100 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 1000V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.4Ω(Max) ·100% avalanche tested ·Minimum |
INCHANGE |
|
IXTM5N100A | Standard Power MOSFET Standard Power MOSFET
VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V
ID25 5A 5A
RDS(on) 2.4 Ω 2.0 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Tes |
IXYS Corporation |
|
IXTM5N100A | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 1000V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2Ω(Max) ·100% avalanche tested ·Minimum L |
INCHANGE |
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