डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTM11N80 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.95Ω(Max) ·100% avalanche tested ·Minimu |
INCHANGE |
|
IXTM11N80 | Power MOSFET MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V
ID25
11 A 13 A
RDS(on)
0.95 Ω 0.80 Ω
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGS VGSM I
D25
IDM
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IXYS |
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