IXTK200N10P डाटा शीट PDF( Datasheet )

PolarHTTM Power MOSFET IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated V = 100 V DSS ID25 = 200 A RDS(on) ≤ 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM I AR EAR E AS dv/dt PD TJ TJM Tstg T

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va