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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTJ36N20 | N-Channel MOSFET ADVANCE TECHNICAL INFORMATION
HiPerFETTM
N-Channel Enhancement Mode
IXTJ 36N20
VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ
trr < 200 ns
Symbol
Test Conditions
VDSS VDGR VGS V
GSM
ID25 IDM IAR EAR dv/dt
P D |
IXYS |
|
IXTJ36N20 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 70mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
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