IXTH75N10 डाटा शीट PDF( Datasheet )

MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VD

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia

Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTH75N10L2 IXTT75N10L2 D O DD RGi G O ww O S VDSS = 100V ID25 = 75A ≤ RDS