डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH48N20 | Power MOSFET Advance Technical Information
Standard Power MOSFET
N-Channel Enhancement Mode
IXTH 48N20
VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ
Symbol Test Conditions
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/d |
IXYS |
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IXTH48N20 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 50mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
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