डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH230N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH230N085T IXTQ230N085T
VDSS = ID25 =
RDS(on) ≤
85 230 4.4
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR |
IXYS Corporation |
|
IXTH230N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTH230N085T
·FEATURES ·Drain Source Voltage-
: VDSS= 85V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.4mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |