डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH14N80 | MegaMOS MFET MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 14N80
VDSS = 800 V
ID25 = 14 A RDS(on) = 0.70 Ω
Symbol
Test Conditions
VDSS V
DGR
VGS VGSM
ID25 IDM
PD
TJ TJM Tstg
TJ = 25°C to 150°C
T J
=
25°C
to
1 |
IXYS |
|
IXTH14N80 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |