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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH102N20T | Power MOSFET Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH102N20T IXTQ102N20T IXTV102N20T
VDSS = ID25 =
RDS(on) ≤
200 102
23
V A mΩ
Symbol
VDSS
VGSM
I
D25 |
IXYS |
|
IXTH102N20T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 23mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
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