डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTC200N10T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable op |
INCHANGE |
|
IXTC200N10T | Power MOSFET TrenchMVTM Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
IXTC200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg
TL
VISOL Md Weight
Test Conditio |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |