IXTA90N055T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA90N055T IXTP90N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 V 90 A 8.8 m Ω Symbol VDSS VDGR VGSM ID25 ILRMS

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.8mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari

TrenchT2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C t

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari