IRLR120N डाटा शीट PDF( Datasheet )

$GYDQFHG 3RZHU 026)(7 IRLR120N FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage

l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

isc N-Channel MOSFET Transistor IRLR120N, IIRLR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

IRLR120NPbF IRLU120NPbF l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from Intern