IRLR120 डाटा शीट PDF( Datasheet )

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www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs

iscN-Channel MOSFET Transistor IRLR120 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.27Ω @VGS=5V ·Enhancement mode: Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 1

$GYDQFHG 3RZHU 026)(7 IRLR120N FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage

l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

isc N-Channel MOSFET Transistor IRLR120N, IIRLR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev