डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRL640 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRL640
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operati |
Fairchild Semiconductor |
|
IRL640 | POWER MOSFET |
International Rectifier |
|
IRL640 | Power MOSFET Power MOSFET
IRL640, SiHL640
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 5.0 V
66 9.0 38 Single
0.18
TO-220AB
D
S D G
G
S N-Channel MO |
Vishay |
|
IRL640A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area |
Fairchild Semiconductor |
|
IRL640S | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRL640S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operati |
Fairchild Semiconductor |
|
IRL640S | POWER MOSFET |
International Rectifier |
|
IRL640S | Power MOSFET Power MOSFET
IRL640S, SiHL640S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
200 VGS = 5 V
66
Qgs (nC)
9.0
Qgd (nC)
38
Configuration
Single
0.18
SMD-220 K
D
G
DS G
S N-Ch |
Vishay |
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