IRL540N डाटा शीट PDF( Datasheet )

Previous Datasheet Index Next Data Sheet PD - 9.1495 PRELIMINARY l l l l l l IRL540N HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 44mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe

PD- 95234 IRL540NS/LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IRL540NS/LPbF 4 www.irf.com IRL540NS/LPbF www.irf.com 5

• Lead-Free PD - 94997 IRL540NPbF HEXFET® Power MOSFET www.irf.com 1 2/10/04 IRL540NPbF 2 www.irf.com IRL540NPbF www.irf.com 3 IRL540NPbF 4 www.irf.com IRL540NPbF www.irf.com 5 IRL540NPbF 6 www.i

PD -91535 IRL540NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated D