डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRL530 | Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 1 |
Fairchild Semiconductor |
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IRL530 | Power MOSFET |
International Rectifier |
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IRL530 | Power MOSFET IRL530, SiHL530
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single
D
FEATURES
100 0.16
• Dynamic dV/dt Rating � |
Vishay |
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IRL530A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max. |
Fairchild |
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IRL530N | HEXFET Power MOSFET PD - 91348C
IRL530N
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
HEXFET® Power MOSFET
D
VDSS = 100V |
IRF |
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IRL530N | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRL530N,IIRL530N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.1Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IRL530NL | HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
G11
Description
Fifth Generation HEXFETs |
International Rectifier |
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