IRL520 डाटा शीट PDF( Datasheet )

Power MOSFET IRL520, SiHL520 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 100 VGS = 5.0 V 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single D TO-220AB 0.27 S D G G S N-Cha

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 1

Power MOSFET IRL520L, SiHL520L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 12 3.0 7.1 Single I2PAK (TO-262) D 0.27 DS G G S N-Cha

PD - 91494A IRL520N HEXFET® l l l l l l Power MOSFET VDSS = 100V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D

isc N-Channel MOSFET Transistor IRL520N，IIRL520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.18Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot var

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu