डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRL2910 | HEXFET Power MOSFET PD - 91375B
IRL2910
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R |
International Rectifier |
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IRL2910 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.026Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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IRL2910L | Power MOSFET l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from Interna |
International Rectifier |
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IRL2910L | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
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IRL2910LPbF | HEXFET Power MOSFET PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free Description |
International Rectifier |
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IRL2910PBF | Power MOSFET • Lead-Free
PD - 94993
IRL2910PbF
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International Rectifier |
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IRL2910S | Power MOSFET l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from Interna |
International Rectifier |
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