डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGP4262DPBF | INSULATED GATE BIPOLAR TRANSISTOR IRGP4262DPbF IRGP4262D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A Applications |
International Rectifier |
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IRGP4262DPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |