डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGIB10B60KD1 | INSULATED GATE BIPOLAR TRANSISTOR PD-94576A
IRGIB10B60KD1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. |
International Rectifier |
|
IRGIB10B60KD1P | INSULATED GATE BIPOLAR TRANSISTOR IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Squar |
International Rectifier |
|
IRGIB10B60KD1PBF | INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet.co.kr
PD - 94913
IRGIB10B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Sh |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |