डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGBC20M | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.1127
IRGBC20M
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating freq |
International Rectifier |
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IRGBC20S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20KD2-S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20UD2 | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20U | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20M | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20KD2 | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20F | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20SD2 | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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IRGBC20K-S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |