डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG8P08N120KDPbF | INSULATED GATE BIPOLAR TRANSISTOR IRG8B08N120KDPbF IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V IC = 8A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ |
International Rectifier |
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IRG8P08N120KDPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |