IRG7PK35UD1PbF डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRG7PK35UD1PbF | Insulated Gate Bipolar Transistor
IRG7PK35UD1PbF IRG7PK35UD1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A
G
C
C
C
G
E |
 International Rectifier |
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| IRG7PK35UD1PbF | Insulated Gate Bipolar Transistor | International Rectifier |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |