डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG7PH42U-EP | INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Pos |
International Rectifier |
|
IRG7PH42U-EP | INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Pos |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |