डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG4BC30U | INSULATED GATE BIPOLAR TRANSISTOR PD - 91452E
IRG4BC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provi |
International Rectifier |
|
IRG4BC30U-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91803
IRG4BC30U-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design prov |
International Rectifier |
|
IRG4BC30UD | INSULATED GATE BIPOLAR TRANSISTOR PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode |
International Rectifier |
|
IRG4BC30UDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD-94810A
IRG4BC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast CoPack IGBT
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, |
International Rectifier |
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