डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ24 | Power MOSFET |
International Rectifier |
|
IRFZ24 | Power MOSFET Advanced Power MOSFET
IRFZ24
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operatin |
Fairchild Semiconductor |
|
IRFZ24 | Power MOSFET www.vishay.com
IRFZ24
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
25 5.8 11 Single |
Vishay |
|
IRFZ24A | ADVANCED POWER MOSFET www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175 |
Fairchild Semiconductor |
|
IRFZ24L | HEXFET Power MOSFET www.DataSheet4U.com
PD - 9.891A
IRFZ24S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching
D |
International Rectifier |
|
IRFZ24L | Power MOSFET IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
60 VGS = 10 V
25
Qgs (nC)
5.8
Qgd (nC)
11
Configuration
Single
0.10
I2PAK (TO-2 |
Vishay |
|
IRFZ24N | N-channel enhancement mode TrenchMOS transistor www.DataSheet4U.com
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor |
NXP |
www.DataSheet.in | 2017 | संपर्क |