IRFS630 डाटा शीट PDF( Datasheet )

200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs

IRFS630 Rev.D Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS630A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 20

IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology