डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFS3307 | Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
IRF |
|
IRFS3307 | HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
|
IRFS3307PbF | HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
|
IRFS3307ZPBF | HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
|
IRFS3307ZTRL | N-Channel MOSFET isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 75V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and |
INCHANGE |
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