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IRFR410 | N-Channel Power MOSFETs www.DataSheet4U.com
IRFR410, IRFU410
Data Sheet July 1999 File Number
3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. T |
Intersil Corporation |
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IRFR4104 | Power MOSFET www.DataSheet4U.com
PD - 94728
AUTOMOTIVE MOSFET
IRFR4104 IRFU4104
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast |
International Rectifier |
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IRFR4104 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFR4104, IIRFR4104
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
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IRFR4104PbF | Power MOSFET PD - 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up t |
International Rectifier |
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IRFR4105 | Power MOSFET www.DataSheet4U.com
PD - 91302C
IRFR/U4105
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
R |
International Rectifier |
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IRFR4105 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFR4105, IIRFR4105
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi |
INCHANGE |
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IRFR4105PbF | Power MOSFET PD - 95550A
IRFR4105PbF IRFU4105PbF
Ultra Low On-Resistance l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
D
VD |
International Rectifier |
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