डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR234 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFR234
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
|
IRFR234A | Power MOSFET
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý |
Samsung |
|
IRFR234B | 250V N-Channel MOSFET IRFR234B / IRFU234B
November 2001
IRFR234B / IRFU234B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |