डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP440 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFP440
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
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IRFP440 | Power MOSFET |
International Rectifier |
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IRFP440 | N-Channel Power MOSFET IRFP440
Data Sheet July 1999 File Number
2089.3
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, t |
Intersil Corporation |
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IRFP440 | Power MOSFET IRFP440, SiHFP440
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 30 Single
D
FEATURES
500 0.85
• Dynamic dV/dt Rating � |
Vishay Siliconix |
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IRFP440A | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max) ·Fast Switching ·100% aval |
Inchange Semiconductor |
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IRFP440A | Power MOSFET
)($785(6
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Samsung |
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IRFP440B | 500V N-Channel MOSFET IRFP440B
November 2001
IRFP440B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |