IRFP350LC डाटा शीट PDF( Datasheet )

HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching ·100% avalanc

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D TO-247AC S D G G S