डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP350A | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) ·Fast Switching ·100% avalan |
Inchange Semiconductor |
|
IRFP350A | Advanced Power MOSFET www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Low |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |